PART |
Description |
Maker |
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
NN5118160 NN5118160A NN5118160AJ-60 NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM
|
N.A. ETC[ETC]
|
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416 |
1M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
|
SAMSUNG[Samsung semiconductor]
|
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416V4100B KM416V4000B KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
|
K4E661612EK4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet
|
Samsung Electronic
|
K4E151611 K4E151611D K4E151612D K4E171611D K4E1716 |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416V4000C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16CMOS动态RAM(带快速页模式)) 4米16位的快速页面模式的CMOS动态RAM4米16位的CMOS动态随机存储器(带快速页模式))
|
Samsung Semiconductor Co., Ltd.
|
IC42S16160 IC42S16160-7TIG IC42S16160-6TG IC42S161 |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
GM72V661641D GM72V661641DI GM72V661641DLI |
1,048,576WORD X 16BIT X 4BANK SYNCHRONOUS DYNAMIC RAM 1,048,576字16Bit的X 4BANK同步动态RAM
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
|